采用GaAs HBT技术设计10GHz带宽可变增益放大器

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238134

Lei Zhou, Danyu Wu, Jin Wu, Zhi Jin, Xinyu Liu

{"title":"采用GaAs HBT技术设计10GHz带宽可变增益放大器","authors":"Lei Zhou, Danyu Wu, Jin Wu, Zhi Jin, Xinyu Liu","doi":"10.1109/MMWCST.2012.6238134","DOIUrl":null,"url":null,"abstract":"This paper reports a fully differential variable gain amplifier (VGA) using GaAs heterojunction bipolar transistors (HBTs). Gilbert cells with transimpedance loads are applied to achieve wide bandwidth. According to the single-ended measurements, the 3-dB bandwidth is 10.5GHz at a maximum gain of 22dB. A gain-bandwidth product of 132GHz is achieved. The circuit consists of two cascaded variable gain stages to offer a high dynamic range. The experiment results show the dynamic range is larger than 28dB. The chip consumes 368mV at a supply voltage of -5.2V. Design considerations and experimental results are presented in this paper.","PeriodicalId":150727,"journal":{"name":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","volume":"181 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Design of a 10GHz bandwidth variable gain amplifier using a GaAs HBT technology\",\"authors\":\"Lei Zhou, Danyu Wu, Jin Wu, Zhi Jin, Xinyu Liu\",\"doi\":\"10.1109/MMWCST.2012.6238134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a fully differential variable gain amplifier (VGA) using GaAs heterojunction bipolar transistors (HBTs). Gilbert cells with transimpedance loads are applied to achieve wide bandwidth. According to the single-ended measurements, the 3-dB bandwidth is 10.5GHz at a maximum gain of 22dB. A gain-bandwidth product of 132GHz is achieved. The circuit consists of two cascaded variable gain stages to offer a high dynamic range. The experiment results show the dynamic range is larger than 28dB. The chip consumes 368mV at a supply voltage of -5.2V. Design considerations and experimental results are presented in this paper.\",\"PeriodicalId\":150727,\"journal\":{\"name\":\"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology\",\"volume\":\"181 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MMWCST.2012.6238134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MMWCST.2012.6238134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文报道了一种采用砷化镓异质结双极晶体管的全差分可变增益放大器(VGA)。采用带跨阻抗负载的吉尔伯特单元来实现宽带。根据单端测量，3db带宽为10.5GHz，最大增益为22dB。实现了132GHz的增益带宽乘积。该电路由两个级联可变增益级组成，以提供高动态范围。实验结果表明，动态范围大于28dB。该芯片在-5.2V电源电压下消耗368mV。文中给出了设计考虑和实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a 10GHz bandwidth variable gain amplifier using a GaAs HBT technology

This paper reports a fully differential variable gain amplifier (VGA) using GaAs heterojunction bipolar transistors (HBTs). Gilbert cells with transimpedance loads are applied to achieve wide bandwidth. According to the single-ended measurements, the 3-dB bandwidth is 10.5GHz at a maximum gain of 22dB. A gain-bandwidth product of 132GHz is achieved. The circuit consists of two cascaded variable gain stages to offer a high dynamic range. The experiment results show the dynamic range is larger than 28dB. The chip consumes 368mV at a supply voltage of -5.2V. Design considerations and experimental results are presented in this paper.

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The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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