28nm FDSOI中通过门/体偏置进行粗/精调谐的数字延迟线

I. Sourikopoulos, A. Frappé, A. Cathelin, L. Clavier, A. Kaiser
{"title":"28nm FDSOI中通过门/体偏置进行粗/精调谐的数字延迟线","authors":"I. Sourikopoulos, A. Frappé, A. Cathelin, L. Clavier, A. Kaiser","doi":"10.1109/ESSCIRC.2016.7598263","DOIUrl":null,"url":null,"abstract":"This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body biasing features available in 28nm FDSOI CMOS. Body biasing offers unique performance characteristics, notably a very low sensitivity to the biasing voltage. The prototype delay line was designed featuring thermometer-code multi-stage activation and gate/body biasing control. A delay range from 560ps to 16.13ns is exhibited for the delay line with a 2GS/s input stream. The unit delay cell exhibits fs/mV sensitivity combined with an order of magnitude larger delay dynamic range and an energy efficiency of only 12.5 fJ/event.","PeriodicalId":246471,"journal":{"name":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A digital delay line with coarse/fine tuning through gate/body biasing in 28nm FDSOI\",\"authors\":\"I. Sourikopoulos, A. Frappé, A. Cathelin, L. Clavier, A. Kaiser\",\"doi\":\"10.1109/ESSCIRC.2016.7598263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body biasing features available in 28nm FDSOI CMOS. Body biasing offers unique performance characteristics, notably a very low sensitivity to the biasing voltage. The prototype delay line was designed featuring thermometer-code multi-stage activation and gate/body biasing control. A delay range from 560ps to 16.13ns is exhibited for the delay line with a 2GS/s input stream. The unit delay cell exhibits fs/mV sensitivity combined with an order of magnitude larger delay dynamic range and an energy efficiency of only 12.5 fJ/event.\",\"PeriodicalId\":246471,\"journal\":{\"name\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2016.7598263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2016.7598263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

本文讨论了一种可编程数字延迟线的设计和特性。所提出架构的核心是一个晶闸管类型的延迟元件,具有粗/微调的能力,而无需使用任何额外的硬件。这是通过利用28nm FDSOI CMOS中的体偏置特性实现的。体偏置具有独特的性能特点,特别是对偏置电压的灵敏度非常低。设计了具有温度计码多级激活和门/体偏置控制的延迟线原型。对于输入流为2GS/s的延迟线,延时范围为560ps ~ 16.13ns。单元延迟电池具有fs/mV的灵敏度,同时具有更大的延迟动态范围和仅为12.5 fJ/event的能量效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A digital delay line with coarse/fine tuning through gate/body biasing in 28nm FDSOI
This paper discusses the design and characterization of a programmable digital delay line. The core of the proposed architecture is a thyristor-type delay element featuring the capability for coarse/fine tuning without using any additional hardware. This is made possible by taking advantage of body biasing features available in 28nm FDSOI CMOS. Body biasing offers unique performance characteristics, notably a very low sensitivity to the biasing voltage. The prototype delay line was designed featuring thermometer-code multi-stage activation and gate/body biasing control. A delay range from 560ps to 16.13ns is exhibited for the delay line with a 2GS/s input stream. The unit delay cell exhibits fs/mV sensitivity combined with an order of magnitude larger delay dynamic range and an energy efficiency of only 12.5 fJ/event.
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