考虑动量空间量化的半导体纳米管能带结构估计

Subhrajit Sikdar, S. Chattopadhyay, B. N. Chowdhury
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引用次数: 0

摘要

本文主要研究了量子约束对半导体纳米管能带结构的影响。在sp3s *模型中加入了电子在动量空间的约束,以确定纳米管的能带结构。观察到纳米管能带的球对称r点由于在横向上的约束而分裂成圆柱对称r '和球对称r″两个点。r点的分裂导致纳米管带隙增大,而带隙随着纳米管芯径和壁厚的减小而进一步增大。这种半导体纳米管表现出新的特性,可以用于开发新的量子电子器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization
In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in sp3s∗ model to determine band structure of the nanotubes. The spherically symmetric r-point of nanotube energy bands is observed to split into cylindrically symmetric r′ and spherically symmetric r″ points due to confinement in transverse directions. Such splitting of r-point leads to increase the band gap ofnanotubes which further increases to a large extent with the decrease of nanotube core diameter and wall thickness. Such semiconductor nanotubes exhibit novel properties which can be exploited for developing novel quantum electronic devices.
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