Subhrajit Sikdar, S. Chattopadhyay, B. N. Chowdhury
{"title":"考虑动量空间量化的半导体纳米管能带结构估计","authors":"Subhrajit Sikdar, S. Chattopadhyay, B. N. Chowdhury","doi":"10.1109/ISDCS.2018.8379630","DOIUrl":null,"url":null,"abstract":"In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in sp3s∗ model to determine band structure of the nanotubes. The spherically symmetric r-point of nanotube energy bands is observed to split into cylindrically symmetric r′ and spherically symmetric r″ points due to confinement in transverse directions. Such splitting of r-point leads to increase the band gap ofnanotubes which further increases to a large extent with the decrease of nanotube core diameter and wall thickness. Such semiconductor nanotubes exhibit novel properties which can be exploited for developing novel quantum electronic devices.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"52 28","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization\",\"authors\":\"Subhrajit Sikdar, S. Chattopadhyay, B. N. Chowdhury\",\"doi\":\"10.1109/ISDCS.2018.8379630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in sp3s∗ model to determine band structure of the nanotubes. The spherically symmetric r-point of nanotube energy bands is observed to split into cylindrically symmetric r′ and spherically symmetric r″ points due to confinement in transverse directions. Such splitting of r-point leads to increase the band gap ofnanotubes which further increases to a large extent with the decrease of nanotube core diameter and wall thickness. Such semiconductor nanotubes exhibit novel properties which can be exploited for developing novel quantum electronic devices.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"52 28\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization
In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in sp3s∗ model to determine band structure of the nanotubes. The spherically symmetric r-point of nanotube energy bands is observed to split into cylindrically symmetric r′ and spherically symmetric r″ points due to confinement in transverse directions. Such splitting of r-point leads to increase the band gap ofnanotubes which further increases to a large extent with the decrease of nanotube core diameter and wall thickness. Such semiconductor nanotubes exhibit novel properties which can be exploited for developing novel quantum electronic devices.