用于射频应用的SiC MESFET晶体管和宽带功率放大器的设计与制造

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240036

P. Chen, H. R. Chang, X. Li, B. Luo

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引用次数: 3

摘要

演示了SiC MESFET封装和功率放大器原型模块，P/sub /输出功率分别为26 W和35 W。SiC PA模块在500 MHz带宽上通过950 MHz至1500 MHz l波段工作保持高功率和高功率增益，这对其他半导体器件来说是一个关键挑战。

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Design and fabrication of SiC MESFET transistor and broadband power amplifier for RF applications

A SiC MESFET package and a prototype power amplifier module were demonstrated with P/sub 1dB/ output power of 26 W and 35 W, respectively. High power and high power gain were maintained through 950 MHz to 1500 MHz L-band operation across 500 MHz bandwidth for the SiC PA module, which is a critical challenge to other semiconductor devices.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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