用于x射线衍射器件制造的深硅蚀刻

H. Miao, M. Mirzaeimoghri, Lei Chen, H. Wen
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引用次数: 0

摘要

我们报告了通过低温和博世工艺的硅光栅的深度反应离子蚀刻。采用这两种工艺的400nm周期光栅的宽高比为bbbb50。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deep silicon etching for X-ray diffraction devices fabrication
We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.
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