{"title":"用于x射线衍射器件制造的深硅蚀刻","authors":"H. Miao, M. Mirzaeimoghri, Lei Chen, H. Wen","doi":"10.1109/OMN.2017.8051446","DOIUrl":null,"url":null,"abstract":"We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.","PeriodicalId":411243,"journal":{"name":"2017 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Deep silicon etching for X-ray diffraction devices fabrication\",\"authors\":\"H. Miao, M. Mirzaeimoghri, Lei Chen, H. Wen\",\"doi\":\"10.1109/OMN.2017.8051446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.\",\"PeriodicalId\":411243,\"journal\":{\"name\":\"2017 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Optical MEMS and Nanophotonics (OMN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMN.2017.8051446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2017.8051446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Deep silicon etching for X-ray diffraction devices fabrication
We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.