具有350 ns快速瞬态响应的12 nA超低静态电流无电容LDO

Nixiao Yan, Xin Zhang, C. Shi, Leilei Huang, Guangsheng Chen, Runxi Zhang
{"title":"具有350 ns快速瞬态响应的12 nA超低静态电流无电容LDO","authors":"Nixiao Yan, Xin Zhang, C. Shi, Leilei Huang, Guangsheng Chen, Runxi Zhang","doi":"10.1109/ICCS56666.2022.9936586","DOIUrl":null,"url":null,"abstract":"This paper presents an output capacitor-less, dual power transistors low-dropout (LDO) regulator with ultra-low quiescent current in 55 nm CMOS process. The LDO employs an adaptive stage to make the LDO a two-stage topology at light load and a three-stage topology at heavy load. A co-enhanced transient circuit is introduced by adding the extra switching current to improve the slew rate without any quiescent current. The simulated results show that the LDO with a quiescent current of 12 nA and a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in steps of $10 \\mu \\mathrm{A} -20$ mA with a rise time and a fall time of 200 ns, the LDO can recover within 350 ns and 490 ns.","PeriodicalId":293477,"journal":{"name":"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 12 nA Ultra-Low Quiescent Current Capacitor-Less LDO with 350 ns Fast Transient Response\",\"authors\":\"Nixiao Yan, Xin Zhang, C. Shi, Leilei Huang, Guangsheng Chen, Runxi Zhang\",\"doi\":\"10.1109/ICCS56666.2022.9936586\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an output capacitor-less, dual power transistors low-dropout (LDO) regulator with ultra-low quiescent current in 55 nm CMOS process. The LDO employs an adaptive stage to make the LDO a two-stage topology at light load and a three-stage topology at heavy load. A co-enhanced transient circuit is introduced by adding the extra switching current to improve the slew rate without any quiescent current. The simulated results show that the LDO with a quiescent current of 12 nA and a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in steps of $10 \\\\mu \\\\mathrm{A} -20$ mA with a rise time and a fall time of 200 ns, the LDO can recover within 350 ns and 490 ns.\",\"PeriodicalId\":293477,\"journal\":{\"name\":\"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)\",\"volume\":\"134 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCS56666.2022.9936586\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 4th International Conference on Circuits and Systems (ICCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCS56666.2022.9936586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种无输出电容、双功率晶体管的超低静态电流LDO稳压器。LDO采用自适应级,使LDO在轻负载时为两级拓扑,在高负载时为三级拓扑。在不增加静态电流的情况下,通过增加额外的开关电流来提高转换速率,从而引入了一种共增强瞬态电路。仿真结果表明,在静态电流为12 nA,电源范围为2.5 ~ 3.6 V的情况下,LDO可以实现稳定的1.2 V输出。当负载电流以$10 \mu \ mathm {A} -20$ mA的阶跃变化,上升时间和下降时间分别为200 ns时,LDO可以在350 ns和490 ns内恢复。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 12 nA Ultra-Low Quiescent Current Capacitor-Less LDO with 350 ns Fast Transient Response
This paper presents an output capacitor-less, dual power transistors low-dropout (LDO) regulator with ultra-low quiescent current in 55 nm CMOS process. The LDO employs an adaptive stage to make the LDO a two-stage topology at light load and a three-stage topology at heavy load. A co-enhanced transient circuit is introduced by adding the extra switching current to improve the slew rate without any quiescent current. The simulated results show that the LDO with a quiescent current of 12 nA and a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in steps of $10 \mu \mathrm{A} -20$ mA with a rise time and a fall time of 200 ns, the LDO can recover within 350 ns and 490 ns.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信