铝包铜焊盘的细间距探测和线接及可靠性

T. Tran, L. Yong, B. Williams, S. Chen, A. Chen
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引用次数: 48

摘要

随着硅技术的规模超过0.25 /spl mu/m,对提高电气性能和减少硅面积的要求推动了铜取代铝互连。前端的变化,反过来,推动线键垫间距从100 /spl mu/m以上到80 /spl mu/m-66 /spl mu/m范围。这为后端在容易氧化的铜表面上以精细的几何间距进行探针和导线连接带来了挑战。在评估了几种再金属化结构和冶金方法后,选择了用铝覆盖铜键合垫作为探测和线接铜器件的主要方法。铝再金属化结构提供了许多优势,有助于利用现有的工具和知识,在晶圆厂,探测和焊线工艺。本文将描述用于选择合适的铜和铝之间的粘附和扩散屏障的探针和线连接实验,以及在探针和线连接过程中能够承受机械应力的铝厚度。考察了探针标记深度以及探针标记对下垫层和铜垫层的影响。在热老化研究的不同读数点,对球剪、线撕裂及相应的失效模式、金属间覆盖和弹坑分析进行了评估,以评估再金属化结构的完整性以及新结构上的球键的质量。并进行了接触电阻测量和可靠性评估。推荐了一种用于铜高性能线键合器件的再金属化结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads
The requirement for improved electrical performance and reduced silicon area has driven Copper to replace Aluminum interconnection as silicon technology is scaled beyond 0.25 /spl mu/m. The front-end change, in turn, pushes wirebond pad pitch from above 100 /spl mu/m to 80 /spl mu/m-66 /spl mu/m range. This creates challenges for back-end to probe and wire bond at fine pitch geometry onto a readily oxidized Copper surface. After several re-metallization structures and types of metallurgy were evaluated, capping Copper bond pads with Aluminum was selected as the primary approach for probing and wirebonding Copper devices. Aluminum re-metallization structure offers many advantages that help leverage existing tooling and knowledge in fab, probing and wire bonding processes. This paper will describe probe and wirebond experiments used to select the proper adhesion and diffusion barrier between Copper and Aluminum, and Aluminum thickness that can withstand the mechanical stress during probing and wire bonding. Probe mark depth and the impact of probe marks to the underlying barrier and Copper pad were examined. Ball shear, wire rip and corresponding failure modes, intermetallic coverage and cratering analysis were evaluated at various readpoints of thermal aging study to evaluate the integrity of the re-metallization structure as well as the quality of ball bonds onto the new structure. Contact resistance measurement and reliability assessment were also performed. One re-metallization structure was recommended for Copper High Performance wire bonded devices.
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