1500v和10a SiC电机驱动逆变模块

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.240150

H. R. Chang, E. Hanna, Q. Zhang, M. Gomez

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引用次数: 7

摘要

本文报道了用SiC肖特基二极管作为自由旋转二极管(FWD)的1500 V SiC mos增强型jfet和额定功率为1500 V 10A的SiC逆变模块的设计、制造和电性能。对1500 V SiC mos增强型jfet和SiC肖特基fwd进行了静态和动态表征，并将其封装到相腿型逆变器模块中。在母线电压为600 V时，成功地实现了1500 V和10 A SiC逆变模块在电机驱动中的应用。这是SiC逆变器模块上报告的最高母线电压。

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1500 V and 10 A SiC motor drive inverter module

This paper reports the design, fabrication, and electrical performance of 1500 V SiC MOS-enhanced JFETs and a SiC inverter module with a power rating of 1500 V and 10A using SiC Schottky diodes as the free wheeling diode (FWD). The static and dynamic characterization of 1500 V SiC MOS-enhanced JFETs and SiC Schottky FWDs were performed and packaged into phase leg inverter modules. A demonstration of a 1500 V and 10 A SiC inverter module in a motor drive at bus voltage of 600 V was successfully implemented. This is the highest bus voltage reported on SiC inverter modules.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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