电子和离子联合辐照硅器件局部寿命裁剪的精确模拟

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583737

J. Vobecký, P. Hazdra, J. Voves, F. Spurný, J. Homola

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引用次数: 9

摘要

对功率器件进行离子和电子辐照，局部降低少数载流子寿命已成为一种广泛应用的做法。为了高效、准确地设计辐照参数，如离子类型、辐照能量和剂量、退火温度等，考虑充分表征的深能级的器件模拟和求解阱动力学方程的完整解是必要的。

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Accurate simulation of combined electron and ion irradiated silicon devices for local lifetime tailoring

Both the ion and electron irradiation of power devices have already become a widely used practice to locally reduce the minority carrier lifetime. For efficient and accurate design of irradiation parameters, i.e. ion type, irradiation energy and dose, annealing temperature, etc., the device simulation taking into account the fully characterized deep levels and solving the complete solution of trap-dynamic equations is necessary.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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