一种异步GaAs MESFET静态RAM，采用新的电流镜像存储单元

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394495

A. Chandna, Richard B. Brown

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引用次数: 11

摘要

设计、制作并测试了一种采用新型存储单元的实验性1kb GaAs MESFET静态RAM。新的存储单元不受传统六晶体管存储单元设计的破坏性读取问题的限制。该存储单元还为读出提供了比使用相同面积和电池功率的传统存储单元大得多的访问电流。在1 kb的测试电路中获得了1.6 ns的地址访问时间。

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An asynchronous GaAs MESFET static RAM using a new current mirror memory cell

An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<>

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15th Annual GaAs IC Symposium

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