Z. Wang, M. Berroth, U. Nowotny, P. Hofmann, A. Hulsmann, G. Kaufel, K. Kohler, B. Raynor, J. Schneider
{"title":"采用0.3 μm门长量子阱晶体管的20gbit /s集成激光二极管电压驱动器","authors":"Z. Wang, M. Berroth, U. Nowotny, P. Hofmann, A. Hulsmann, G. Kaufel, K. Kohler, B. Raynor, J. Schneider","doi":"10.1109/ESSCIRC.1992.5468178","DOIUrl":null,"url":null,"abstract":"An integrated laser diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with a gate length of 0.3 μm has been developed. Its large signal bandwidth was 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gbit/s showed an opening like that of the input signal. Increasing the bit rate of the input signal by means of a multiplexer, we can prove that the LDVD can operate at 20 Gbit/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40 mA modulation current for a laser diode with 20 ¿ dynamic resistance. The power consumption is less than 500 mW.","PeriodicalId":242379,"journal":{"name":"ESSCIRC '92: Eighteenth European Solid-State Circuits conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"20 Gbit/s Integrated Laser Diode Voltage Driver Using 0.3 μm Gate Length Quantum Well Transistors\",\"authors\":\"Z. Wang, M. Berroth, U. Nowotny, P. Hofmann, A. Hulsmann, G. Kaufel, K. Kohler, B. Raynor, J. Schneider\",\"doi\":\"10.1109/ESSCIRC.1992.5468178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An integrated laser diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with a gate length of 0.3 μm has been developed. Its large signal bandwidth was 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gbit/s showed an opening like that of the input signal. Increasing the bit rate of the input signal by means of a multiplexer, we can prove that the LDVD can operate at 20 Gbit/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40 mA modulation current for a laser diode with 20 ¿ dynamic resistance. The power consumption is less than 500 mW.\",\"PeriodicalId\":242379,\"journal\":{\"name\":\"ESSCIRC '92: Eighteenth European Solid-State Circuits conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC '92: Eighteenth European Solid-State Circuits conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.1992.5468178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '92: Eighteenth European Solid-State Circuits conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1992.5468178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
20 Gbit/s Integrated Laser Diode Voltage Driver Using 0.3 μm Gate Length Quantum Well Transistors
An integrated laser diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with a gate length of 0.3 μm has been developed. Its large signal bandwidth was 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gbit/s showed an opening like that of the input signal. Increasing the bit rate of the input signal by means of a multiplexer, we can prove that the LDVD can operate at 20 Gbit/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40 mA modulation current for a laser diode with 20 ¿ dynamic resistance. The power consumption is less than 500 mW.
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