Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada
{"title":"一种利用MOSFET阈值电压变化的过程可扩展无电压参考温度传感器","authors":"Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada","doi":"10.1109/A-SSCC53895.2021.9634727","DOIUrl":null,"url":null,"abstract":"This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\\circ}{\\mathrm {C}}$ after a 2-point calibration over $0\\sim 100^{\\circ}{\\mathrm {C}}$, and a line sensitivity of $14^{\\circ}{\\mathrm {C/V}}$ over 0.8~1.2 V operation.","PeriodicalId":286139,"journal":{"name":"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation\",\"authors\":\"Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada\",\"doi\":\"10.1109/A-SSCC53895.2021.9634727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\\\\circ}{\\\\mathrm {C}}$ after a 2-point calibration over $0\\\\sim 100^{\\\\circ}{\\\\mathrm {C}}$, and a line sensitivity of $14^{\\\\circ}{\\\\mathrm {C/V}}$ over 0.8~1.2 V operation.\",\"PeriodicalId\":286139,\"journal\":{\"name\":\"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/A-SSCC53895.2021.9634727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/A-SSCC53895.2021.9634727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation
This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\circ}{\mathrm {C}}$ after a 2-point calibration over $0\sim 100^{\circ}{\mathrm {C}}$, and a line sensitivity of $14^{\circ}{\mathrm {C/V}}$ over 0.8~1.2 V operation.