一种带隙参考电路的设计方法

2019 1st International Conference on Signal Processing, VLSI and Communication Engineering (ICSPVCE) Pub Date : 2019-03-01 DOI:10.1109/ICSPVCE46182.2019.9092822

J. Kaur, R. Kaushik, A. Srivastava, Sakshi Singh

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引用次数: 2

摘要

本文提出了一种用两级运算放大器设计带隙参考电路的系统方法。电路采用0.18µm CMOS工艺设计。在仿真中，我们实现了参考电压为789 mV，温度系数为71.69 ppm/ºC，温度范围为104°C，电源电压为1.8 V。参考电压电路的功耗为60.82µW。完成了BGR堆芯的DRC布置和LVS校核。设计的BGR电路的总面积为0.027 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Design Approach for Bandgap Reference Circuit

The paper presents a systematic approach of designing a bandgap reference circuit using 2-stage operational amplifier. The circuit is designed using 0.18 µm CMOS process. In simulation we achieve a reference of 789 mV with a coefficient of temperature 71.69 ppm/ºC for the temperature range 104°C at 1.8 V supply voltage. The reference voltage circuit consumed 60.82 µW of power. The layout with DRC and LVS check of the BGR core was completed. The overall area of the designed BGR circuit is 0.027 mm2.

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来源期刊

2019 1st International Conference on Signal Processing, VLSI and Communication Engineering (ICSPVCE)

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