Hgx−1CdxTe阳极硫化的特点

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI:10.1109/EDM.2015.7184481

Dmitry E. Ipatov, E. R. Zakirov, V. Kesler

{"title":"Hgx−1CdxTe阳极硫化的特点","authors":"Dmitry E. Ipatov, E. R. Zakirov, V. Kesler","doi":"10.1109/EDM.2015.7184481","DOIUrl":null,"url":null,"abstract":"Processes of thin sulfide layers on HgCdTe surface formation by anodic sulfdization were investigated in this work. 0.1M Na2S in ethylene glycol solution was used as an electrolyte. Potentiodynamic curves obtained do not correspond with expected ones from literature [1], but qualitatively represent electrochemical processes occurring - formation of cadmium, tellurium and mercury sulfides. Galvanostatic dependencies verify formation of non-insulating films a composition of which depends on anodization duration. Analysis of the surface chemical composition by XPS has shown that the main components of sulfide films formed are cadmium and mercury sulfides, with tellurium sulfide nearly absenting. The model of sulfide layer formation based on experimental data obtained has been proposed. Voltage-current (I-V) characteristics of Au-native sulfide-HgCdTe structures being rectifying were obtained and analyzed.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Features of Hgx−1CdxTe anodic sulfdization\",\"authors\":\"Dmitry E. Ipatov, E. R. Zakirov, V. Kesler\",\"doi\":\"10.1109/EDM.2015.7184481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Processes of thin sulfide layers on HgCdTe surface formation by anodic sulfdization were investigated in this work. 0.1M Na2S in ethylene glycol solution was used as an electrolyte. Potentiodynamic curves obtained do not correspond with expected ones from literature [1], but qualitatively represent electrochemical processes occurring - formation of cadmium, tellurium and mercury sulfides. Galvanostatic dependencies verify formation of non-insulating films a composition of which depends on anodization duration. Analysis of the surface chemical composition by XPS has shown that the main components of sulfide films formed are cadmium and mercury sulfides, with tellurium sulfide nearly absenting. The model of sulfide layer formation based on experimental data obtained has been proposed. Voltage-current (I-V) characteristics of Au-native sulfide-HgCdTe structures being rectifying were obtained and analyzed.\",\"PeriodicalId\":213801,\"journal\":{\"name\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2015.7184481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2015.7184481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了阳极硫化在碲化镉表面形成薄硫化层的工艺。0.1M Na2S在乙二醇溶液中作为电解质。得到的动电位曲线与文献[1]的预期曲线不一致，但定性地表征了镉、碲和汞硫化物形成的电化学过程。恒电流依赖性验证了非绝缘膜的形成，其组成取决于阳极氧化时间。XPS分析表面化学成分表明，形成的硫化膜主要成分为镉和汞硫化物，几乎不含硫化碲。根据实验数据，提出了硫化物层的形成模型。得到并分析了经整流的金原生硫化物- hgcdte结构的电压-电流特性。

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Features of Hgx−1CdxTe anodic sulfdization

Processes of thin sulfide layers on HgCdTe surface formation by anodic sulfdization were investigated in this work. 0.1M Na2S in ethylene glycol solution was used as an electrolyte. Potentiodynamic curves obtained do not correspond with expected ones from literature [1], but qualitatively represent electrochemical processes occurring - formation of cadmium, tellurium and mercury sulfides. Galvanostatic dependencies verify formation of non-insulating films a composition of which depends on anodization duration. Analysis of the surface chemical composition by XPS has shown that the main components of sulfide films formed are cadmium and mercury sulfides, with tellurium sulfide nearly absenting. The model of sulfide layer formation based on experimental data obtained has been proposed. Voltage-current (I-V) characteristics of Au-native sulfide-HgCdTe structures being rectifying were obtained and analyzed.

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2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices

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