变系数非线性偏微分方程的解析解法。注射锁紧振荡器制造的优化研究

E. Pankratov
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引用次数: 0

摘要

提高集成电路元件(p-n结及其系统等)的集成率是固态电子学中一个实际而深入解决的问题[1-8]。随着集成率的提高,有必要减小它们的尺寸。为了减少维数,我们使用了几种方法。目前广泛采用激光和微波两种方式对注入的掺杂剂进行退火。这些类型的退火也广泛用于离子注入过程中产生的辐射缺陷的退火[9-17]。利用这些方法,可以利用温度分布的不均匀性导致的工艺参数的不均匀性来提高集成电路元件的集成率。在这种情况下,利用阿伦尼乌斯定律[1,3]可以得到集成电路元件的降维[18]。另一种制造小尺寸集成电路元件的方法是通过扩散或离子注入掺杂异质结构[1-3]。然而,在这种情况下,需要对掺杂剂和/或辐射缺陷进行优化[18]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Analytical Approach of Solution of Nonlinear Partial Differential Equations with Variable Coefficients. On Optimization of Manufacturing of an Injection Locked Oscillator
An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are using several approaches. They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9-17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1-3]. However in this case optimization of dopant and/or radiation defects is required [18].
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