{"title":"变系数非线性偏微分方程的解析解法。注射锁紧振荡器制造的优化研究","authors":"E. Pankratov","doi":"10.20431/2349-4050.0702005","DOIUrl":null,"url":null,"abstract":"An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are using several approaches. They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9-17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1-3]. However in this case optimization of dopant and/or radiation defects is required [18].","PeriodicalId":286316,"journal":{"name":"International Journal of Innovative Research in Electronics and Communications","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Analytical Approach of Solution of Nonlinear Partial Differential Equations with Variable Coefficients. On Optimization of Manufacturing of an Injection Locked Oscillator\",\"authors\":\"E. Pankratov\",\"doi\":\"10.20431/2349-4050.0702005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are using several approaches. They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9-17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1-3]. However in this case optimization of dopant and/or radiation defects is required [18].\",\"PeriodicalId\":286316,\"journal\":{\"name\":\"International Journal of Innovative Research in Electronics and Communications\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Innovative Research in Electronics and Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.20431/2349-4050.0702005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Innovative Research in Electronics and Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.20431/2349-4050.0702005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Analytical Approach of Solution of Nonlinear Partial Differential Equations with Variable Coefficients. On Optimization of Manufacturing of an Injection Locked Oscillator
An actual and intensively solving problems of solid state electronics is increasing of integration rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are using several approaches. They are widely using laser and microwave types of annealing of infused dopants. These types of annealing are also widely using for annealing of radiation defects, generated during ion implantation [9-17]. Using the approaches gives a possibility to increase integration rate of elements of integrated circuits through inhomogeneity of technological parameters due to generating inhomogenous distribution of temperature. In this situation one can obtain decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3]. Another approach to manufacture elements of integrated circuits with smaller dimensions is doping of heterostructure by diffusion or ion implantation [1-3]. However in this case optimization of dopant and/or radiation defects is required [18].