{"title":"无定形氧化钽和氧化铌薄膜的导电和击穿","authors":"S. D. Khanin","doi":"10.1109/ISEIM.1995.496517","DOIUrl":null,"url":null,"abstract":"The paper presents the results of investigating the electronic conduction and destruction of amorphous tantalum and niobium oxides (a-Ta/sub 2/O/sub 5/, a-Nb/sub 2/O/sub 5/) in thin anodic layers on metal surfaces in strong electric fields. It is shown that the breakdown of a highly homogeneous oxide dielectric is preceded by storage processes (dielectric aging).","PeriodicalId":130178,"journal":{"name":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","volume":"95 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical conduction and breakdown in amorphous tantalum and niobium oxide films\",\"authors\":\"S. D. Khanin\",\"doi\":\"10.1109/ISEIM.1995.496517\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the results of investigating the electronic conduction and destruction of amorphous tantalum and niobium oxides (a-Ta/sub 2/O/sub 5/, a-Nb/sub 2/O/sub 5/) in thin anodic layers on metal surfaces in strong electric fields. It is shown that the breakdown of a highly homogeneous oxide dielectric is preceded by storage processes (dielectric aging).\",\"PeriodicalId\":130178,\"journal\":{\"name\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"volume\":\"95 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1995 International Symposium on Electrical Insulating Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEIM.1995.496517\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Symposium on Electrical Insulating Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEIM.1995.496517","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical conduction and breakdown in amorphous tantalum and niobium oxide films
The paper presents the results of investigating the electronic conduction and destruction of amorphous tantalum and niobium oxides (a-Ta/sub 2/O/sub 5/, a-Nb/sub 2/O/sub 5/) in thin anodic layers on metal surfaces in strong electric fields. It is shown that the breakdown of a highly homogeneous oxide dielectric is preceded by storage processes (dielectric aging).
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