{"title":"Si-IGBT/ sic -二极管混合对高功率密度变换器的精确电路功耗设计方法","authors":"K. Takao, H. Ohashi","doi":"10.1109/EPEPEMC.2008.4635244","DOIUrl":null,"url":null,"abstract":"An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.","PeriodicalId":149421,"journal":{"name":"2008 13th International Power Electronics and Motion Control Conference","volume":"200 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Exact circuit power loss design method for high power density converters utilizing Si-IGBT/SiC-diode hybrid pairs\",\"authors\":\"K. Takao, H. Ohashi\",\"doi\":\"10.1109/EPEPEMC.2008.4635244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.\",\"PeriodicalId\":149421,\"journal\":{\"name\":\"2008 13th International Power Electronics and Motion Control Conference\",\"volume\":\"200 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 13th International Power Electronics and Motion Control Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEPEMC.2008.4635244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 13th International Power Electronics and Motion Control Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPEMC.2008.4635244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
提出了一种精确的电路损耗设计方法。该方法可用于设计基于Si-IGBT/ sic -肖特基势垒二极管(SiC-SBD)或高压Si-IEGT/ sic - pin -二极管混合对的高功率密度变换器。为了精确计算功率损耗，介绍了一种提取器件模型参数的经验方法。将功率损耗的计算结果与实验结果进行了比较，两者吻合较好。利用该方法估算了4.5 kV Si-IEGT/5 kV SiC-PiN二极管杂化对的功率损耗，探讨了进一步提高开关频率的可能性。
Exact circuit power loss design method for high power density converters utilizing Si-IGBT/SiC-diode hybrid pairs
An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental results, and the good agreements are confirmed. By using the method, the power loss of the 4.5 kV Si-IEGT/5 kV SiC-PiN diode hybrid pair is estimated to investigate the possibility of further increase of the switching frequency.
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