DDR5双列存储模块电源完整性设计与分析

Shinyoun Park, Vinod Arjun Huddar
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引用次数: 0

摘要

在高速设计空间的今天,速度是决定产品性能的主要因素。DDR5的双列内存模块(DIMM)设计包含许多高速dram,其信号速度足够高,印刷电路板(PCB)的堆叠在DIMM的整体性能中起着至关重要的作用。在6400mbps的速度下,电源完整性变得和信号完整性一样重要。在一阶近似上,电源完整性主要涉及PCB堆叠和去耦电容器的设计。本文讨论了在对称堆叠中配电网络(PDN)对称性的重要性,这种对称堆叠适用于双侧组件安装的pcb,例如以多gbps速度运行的DIMM模块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Analysis of Power Integrity of DDR5 Dual In-Line Memory Modules
In today’s high speed design space, speed is the main factor determining the performance of the product. Dual In-line memory modules (DIMM) designs for DDR5 are packed with many high-speed DRAMs with signal speeds high enough that stack-up of the printed circuit board (PCB) play a critical role in the overall DIMM performance. At speeds of 6400 Mbps, power integrity becomes as important as signal integrity. On a first order approximation, power integrity basically involves PCB stack-up and decoupling capacitors design. This paper covers significance of power distribution network (PDN) symmetry in a symmetric stack-up for two-sided component mounted PCBs like DIMM modules running at multi-Gbps speeds.
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