单片3D集成电路与14nm FinFET技术中基于tsv的3D集成电路

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2016-10-01 DOI:10.1109/S3S.2016.7804405

S. Samal, D. Nayak, M. Ichihashi, S. Banna, S. Lim

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引用次数: 49

摘要

在本文中，我们使用硅验证的14nm FinFET代工技术和商业质量设计对2D ic，单片3D ic和基于tsv的3D ic进行了全面的设计比较。通过使用商业级工具进行全芯片布局和签字分析，探索并验证了单片3D IC与基于tsv的3D IC和2D IC在功耗、性能和面积方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology

In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis using commercial-grade tools, the potential of monolithic 3D IC is explored and validated in terms of power, performance and area against that of TSV-based 3D ICs and 2D ICs.

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来源期刊

2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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