高度可堆叠的3D铁电NAND器件:超越基于电荷陷阱的存储器

2022 IEEE International Memory Workshop (IMW) Pub Date : 2022-05-01 DOI:10.1109/IMW52921.2022.9779278

S. Yoon, Sung I. Hong, Garam Choi, Daehyun Kim, Ildo Kim, S. Jeon, Changhan Kim, Kyunghoon Min

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引用次数: 4

摘要

在本研究中，我们首次使用3D NAND测试车演示了可批量生产的多层次3D铁电NAND (Fe-NAND)器件。在3.4 V的程序/擦除窗口下，三维铁电NAND显示出潜在的多级单元操作。我们还报告了循环和留存特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory

In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.

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2022 IEEE International Memory Workshop (IMW)

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