通过硅通过影响上述BEoL时间相关介电击穿

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI:10.1109/IIRW.2012.6468916

T. Frank, E. Chery, C. Chappaz, L. Arnaud, L. Anghel

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引用次数: 2

摘要

研究了硅通孔(TSV)对上述BEoL介质可靠性的影响。时间相关介电击穿(TDDB)是在65 nm工艺节点上用SiOCH低k介电介质制造的铜双damascene梳子上进行的，设计了直径大于10μm，厚度大于80μm的tsv，通过过中方法加工。

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Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown

The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.

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2012 IEEE International Integrated Reliability Workshop Final Report

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