{"title":"SnO2-Pd作为电容式气体传感器栅极材料的研究","authors":"N. Samotaev, K. Oblov, A. Litvinov, M. Etrekova","doi":"10.1109/MIEL.2019.8889648","DOIUrl":null,"url":null,"abstract":"The article describes the result of the use SnO<inf>2</inf>-Pd thin films as a gate for structure measured ppb range of NO<inf>2</inf> gas by the capacitive method. The technological aspects of fabrication SnO<inf>2</inf>-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO<inf>2</inf>-Pd material allows improvement in sensitivity of NO<inf>2</inf> by an order of magnitude compare the classical Pd based gate field effect sensors.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"24 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor\",\"authors\":\"N. Samotaev, K. Oblov, A. Litvinov, M. Etrekova\",\"doi\":\"10.1109/MIEL.2019.8889648\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article describes the result of the use SnO<inf>2</inf>-Pd thin films as a gate for structure measured ppb range of NO<inf>2</inf> gas by the capacitive method. The technological aspects of fabrication SnO<inf>2</inf>-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO<inf>2</inf>-Pd material allows improvement in sensitivity of NO<inf>2</inf> by an order of magnitude compare the classical Pd based gate field effect sensors.\",\"PeriodicalId\":391606,\"journal\":{\"name\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"volume\":\"24 3\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 31st International Conference on Microelectronics (MIEL)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2019.8889648\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor
The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
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