半导体器件物理建模的半数值方法

2009 International Conference on Advances in Computational Tools for Engineering Applications Pub Date : 2009-07-15 DOI:10.1109/ACTEA.2009.5227928

M. Dehmas, A. Azrar, A. Recioui, M. Challal

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引用次数: 0

摘要

在这项工作中，开发了半解析线法(MoL)的数学扩展，用于解决控制半导体器件内电压分布的泊松方程，以适应与此类结构的几何形状和电极配置相关的现实考虑。然后应用所获得的工具来查找深耗尽模式下MOS电容器内的电位分布。

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A semi numerical approach for semiconductor devices physical modeling

In this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion mode.

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2009 International Conference on Advances in Computational Tools for Engineering Applications

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