{"title":"高速结二极管在BiCMOS技术","authors":"S. Pendharkar, J. Trogolo","doi":"10.1109/BIPOL.2007.4351843","DOIUrl":null,"url":null,"abstract":"Implementation of a very fast high voltage junction diode in a BiCMOS technology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored charge compared to a conventional junction diode in a BiCMOS technology. Using the suggested diode structure, one can achieve the required isolation to the substrate as well as obtain the switching performance close to that of an ideal Schottky diode. It is also possible to integrate this fast switching diode structure into a LDMOS device to help improve the parasitic performance of the LDMOS and increase its switching speed.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High speed junction diodes in BiCMOS technologies\",\"authors\":\"S. Pendharkar, J. Trogolo\",\"doi\":\"10.1109/BIPOL.2007.4351843\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Implementation of a very fast high voltage junction diode in a BiCMOS technology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored charge compared to a conventional junction diode in a BiCMOS technology. Using the suggested diode structure, one can achieve the required isolation to the substrate as well as obtain the switching performance close to that of an ideal Schottky diode. It is also possible to integrate this fast switching diode structure into a LDMOS device to help improve the parasitic performance of the LDMOS and increase its switching speed.\",\"PeriodicalId\":356606,\"journal\":{\"name\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2007.4351843\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2007.4351843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Implementation of a very fast high voltage junction diode in a BiCMOS technology is discussed. It is shown that the diode is more than two orders of magnitude faster with almost two orders of magnitude lower stored charge compared to a conventional junction diode in a BiCMOS technology. Using the suggested diode structure, one can achieve the required isolation to the substrate as well as obtain the switching performance close to that of an ideal Schottky diode. It is also possible to integrate this fast switching diode structure into a LDMOS device to help improve the parasitic performance of the LDMOS and increase its switching speed.
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