电阻式随机存储器的参数化SPICE宏模型及电路演示

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6034967

Huan-Lin Chang, Hsuan-Chih Li, C. Liu, F. Chen, M. Tsai

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引用次数: 5

摘要

提出了一种参数化的SPICE宏观模型来模拟存储器芯片。该双端RRAM模型具有以下特点:(1)高阻状态(HRS)或低阻状态(LRS)初始条件设置(2)成形行为选项(3)直流/瞬态模式选择(4)单极/双极模式选择，以及(5)多级电池(MLC)操作。这些特性在存储器外围电路的仿真中得到了验证，具有良好的收敛性。

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A parameterized SPICE macromodel of resistive random access memory and circuit demonstration

A parameterized SPICE macromodel of resistive random acess memory (RRAM) is demonstrated to simulate the memory chip. The two-terminal RRAM model has the features of (1) initial condition settings of high resistance state (HRS) or low resistance state (LRS) (2) a forming behavior option (3) DC/transient mode selection (4) unipolar/bipolar mode selection, and (5) multilevel cell (MLC) operation. The features have been verified in the simulation of memory peripheral circuits with good convergence.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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