{"title":"一种新型嵌入cb层的重熔LDMOS","authors":"Junjie Xie, Yan Han","doi":"10.1109/ICSICT.2001.981450","DOIUrl":null,"url":null,"abstract":"RESURF LDMOS resorts to lightly doping in the drift region to improve the breakdown voltage which inevitably increases the on-resistance. Here, a novel voltage-sustaining layer called the composite buffer layer (CB-layer for short) is proposed to be embedded in the RESURF LDMOS which significantly reduces the on-resistance, and the breakdown voltage is still high. The CB-layer consists of one n- and p-type layer, both of which are heavier doped to provide a good conductive channel for the carriers in the on-state. When the drift region is fully depleted in the off-state the whole residual charges in the CB-layer approximates to zero since they cancel each other out which means a high breakdown voltage is sustained.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A novel RESURF LDMOS with embedded CB-layer\",\"authors\":\"Junjie Xie, Yan Han\",\"doi\":\"10.1109/ICSICT.2001.981450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RESURF LDMOS resorts to lightly doping in the drift region to improve the breakdown voltage which inevitably increases the on-resistance. Here, a novel voltage-sustaining layer called the composite buffer layer (CB-layer for short) is proposed to be embedded in the RESURF LDMOS which significantly reduces the on-resistance, and the breakdown voltage is still high. The CB-layer consists of one n- and p-type layer, both of which are heavier doped to provide a good conductive channel for the carriers in the on-state. When the drift region is fully depleted in the off-state the whole residual charges in the CB-layer approximates to zero since they cancel each other out which means a high breakdown voltage is sustained.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.981450\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.981450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RESURF LDMOS resorts to lightly doping in the drift region to improve the breakdown voltage which inevitably increases the on-resistance. Here, a novel voltage-sustaining layer called the composite buffer layer (CB-layer for short) is proposed to be embedded in the RESURF LDMOS which significantly reduces the on-resistance, and the breakdown voltage is still high. The CB-layer consists of one n- and p-type layer, both of which are heavier doped to provide a good conductive channel for the carriers in the on-state. When the drift region is fully depleted in the off-state the whole residual charges in the CB-layer approximates to zero since they cancel each other out which means a high breakdown voltage is sustained.