用氧化钇掺杂碳纳米管晶体管的n型

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839667

L. Liyanage, G. Pitner, Xiaoqing Xu, H. Wong

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引用次数: 0

摘要

我们提出了一种新颖的、与超大规模集成电路兼容的技术，以氧化钇作为栅极电介质来制造n型碳纳米管(CNT)晶体管。采用氧化钇(y2o)介质的晶圆级排列碳纳米管晶体管表现出n型行为，离子/离合率为106，亚阈值斜率为95 mV/dec。受控的、缓慢的钇(Y)蒸发形成光滑的氧化物表面，对碳纳米管具有优异的润湿性，从而在碳纳米管晶体管中始终产生强的n型行为。

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N-type doping of carbon nanotube transistors using yttrium oxide (Y2Ox)

We present a novel, VLSI compatible technique to fabricate n-type carbon nanotube (CNT) transistors using yttrium oxide as gate dielectric. Wafer-scale, aligned CNT transistors with yttrium oxide (Y₂O_x) dielectrics exhibit n-type behavior with I_on/I_off of 10⁶ and subthreshold slope of 95 mV/dec. Controlled, slow evaporation of yttrium (Y) forms a smooth oxide surface that has excellent wetting to CNTs which consistently gives rise to strong n-type behavior in CNT transistors.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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