用合成渐近线计算截底微带的公式是一种新的分析方法

W. Tang, Y. Chow
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引用次数: 9

摘要

基片通常被截断到离微带线足够远的地方,以避免干扰线路特性。如果扰动作为截断的函数在公式中已知,因此很容易补偿,那么这种不经济的做法是不必要的。本文从合成渐近线的新方法中导出了所需的公式。这些公式涵盖了整个截断范围。在双面截断情况下,所发现的最坏误差约为6%,而在大型衬底边缘的单面截断情况下,所发现的最坏误差仅为3%,即一半。他们的平均错误率应该只有原来的一半。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Formulas of microstrip with truncated substrate by synthetic asymptote-a novel analysis technique
The substrate is usually truncated far enough from a microstrip line to avoid disturbing the line characteristics. Such uneconomical practice is not necessary if the disturbances as a function of truncation are known in formulas and therefore are easily compensated. This paper derives the desired formulas from the novel technique of synthetic asymptotes. The formulas cover the full truncation range. The worst error found is about 6% for the line in the two-sided truncation case, but only 3%, i.e., half as much, for the line in the one-sided case at the edge of a large substrate. Their average errors should be only half again.
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