SiC功率模块高性能散热概念的比较

2019 IEEE Applied Power Electronics Conference and Exposition (APEC) Pub Date : 2019-03-17 DOI:10.1109/APEC.2019.8722147

Alexander Sewergin, Alexander Stippich, Arne Hendrik Wienhausen Rik W. De Doncker

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引用次数: 3

摘要

在本文中，比较了不同的冷却概念，为市售的现成碳化硅(SiC)模块进行了研究。不仅对热阻和容积流量，而且对压降和泵功率进行了系统的分析。这项工作与其他出版物的不同之处在于，特别关注的是SiC半导体模块裸陶瓷直接键合铜(DBC)基板的撞击射流冷却。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of High Performance Cooling Concepts for SiC Power Modules

In this paper, a comparison of different cooling concepts for a commercially available off-the-shelf silicon carbide (SiC) module is investigated. A systematical approach regarding not only thermal resistance and volume flow but also pressure drop and pump power is performed. This work differs from other publications in that particular focus is laid upon impinging jet cooling of a SiC semiconductor-modules bare ceramic direct-bond-copper (DBC) substrat.

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2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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