低温下硅上的SiGe异质场效应管

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI:10.1109/WOLTE.2002.1022440

F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig

{"title":"低温下硅上的SiGe异质场效应管","authors":"F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig","doi":"10.1109/WOLTE.2002.1022440","DOIUrl":null,"url":null,"abstract":"Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"458 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"SiGe hetero FETs on silicon at cryogenic temperature\",\"authors\":\"F. Aniel, M. Enciso-Aguilar, N. Zerounian, L. Giguerre, P. Crozat, R. Adde, M. Zeuner, G. Hock, T. Hackbarth, H. Herzog, U. Konig\",\"doi\":\"10.1109/WOLTE.2002.1022440\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"458 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022440\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

良好的输运性能和带隙工程使得SiGe合金技术在微电子领域越来越重要。从中频和低噪声两个方面综述了SiGe异质场效应管在低温下的输运特性、性能和潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

SiGe hetero FETs on silicon at cryogenic temperature

Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF and low noise.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 5th European Workshop on Low Temperature Electronics

自引率

0.00%

发文量