J. Hyde, T. Humes, C. Diorio, M. Thomas, M. Figueroa
{"title":"一个浮动门修整,14位,250毫秒/秒的数模转换器在标准的0.25 /spl μ m CMOS","authors":"J. Hyde, T. Humes, C. Diorio, M. Thomas, M. Figueroa","doi":"10.1109/VLSIC.2002.1015118","DOIUrl":null,"url":null,"abstract":"We describe a floating-gate trimmed, 14-bit, 250 Ms/s current-steered DAC fabricated in a 0.25 /spl mu/m CMOS logic process. We trim the static INL to /spl plusmn/0.3 LSB using analog charge stored on floating-gate pFETs. The DAC occupies 0.44 mm/sup 2/ of die area, consumes 53 mW at 250 MHz, allows on-chip electrical trimming, and achieves 72 dB SFDR at 250 Ms/s.","PeriodicalId":162493,"journal":{"name":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A floating-gate trimmed, 14-bit, 250 Ms/s digital-to-analog converter in standard 0.25 /spl mu/m CMOS\",\"authors\":\"J. Hyde, T. Humes, C. Diorio, M. Thomas, M. Figueroa\",\"doi\":\"10.1109/VLSIC.2002.1015118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a floating-gate trimmed, 14-bit, 250 Ms/s current-steered DAC fabricated in a 0.25 /spl mu/m CMOS logic process. We trim the static INL to /spl plusmn/0.3 LSB using analog charge stored on floating-gate pFETs. The DAC occupies 0.44 mm/sup 2/ of die area, consumes 53 mW at 250 MHz, allows on-chip electrical trimming, and achieves 72 dB SFDR at 250 Ms/s.\",\"PeriodicalId\":162493,\"journal\":{\"name\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2002.1015118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2002.1015118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A floating-gate trimmed, 14-bit, 250 Ms/s digital-to-analog converter in standard 0.25 /spl mu/m CMOS
We describe a floating-gate trimmed, 14-bit, 250 Ms/s current-steered DAC fabricated in a 0.25 /spl mu/m CMOS logic process. We trim the static INL to /spl plusmn/0.3 LSB using analog charge stored on floating-gate pFETs. The DAC occupies 0.44 mm/sup 2/ of die area, consumes 53 mW at 250 MHz, allows on-chip electrical trimming, and achieves 72 dB SFDR at 250 Ms/s.