200-GS/s ADC前端采用25%占空比正交时钟发生器

Naftali Weiss, G. Cooke, P. Schvan, P. Chevalier, A. Cathelin, S. Voinigescu
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引用次数: 2

摘要

报道了一种55nm SiGe BiCMOS ADC前端,其采样率为200-GS/s, SNDR分别大于32 dB和25.3 dB,最高可达45 GHz和63 GHz。这种性能是通过前端的单电平采样器架构实现的,该架构最大限度地提高了带宽和线性度,通过降低电压的MOS CML开关,以及dc- 62 GHz, 25%占空比无重叠正交时钟发生器实现的。ADC前端的总功耗为635 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
200-GS/s ADC Front-End Employing 25% Duty Cycle Quadrature Clock Generator
A 55nm SiGe BiCMOS ADC front-end is reported with record 200-GS/s sampling rate and SNDR larger than 32 dB and 25.3 dB up to 45 GHz and 63 GHz, respectively. This performance is enabled by the architecture of the front-end with a single level of samplers which maximizes bandwidth and linearity, by the reduced-voltage MOS CML switch, and by a dc-to-62 GHz, 25% duty-cycle non-overlapping quadrature clock generator. The total power consumption of the ADC front-end is 635 mW.
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