Investigation of Electrical Parameters Degradations for 600V SOI-LIGBT under Repetitive ESD Stresses

Electrical parameters degradations of silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT) under repetitive electrostatic discharge (ESD) stresses have been investigated. After the repetitive ESD stresses, the degradation of threshold voltage (Vth) can be neglected due to the intact channel region. The decrease of on-resistance (Ron) is dominated by hot holes injection into the field oxide at the bird’s beak. Moreover, the saturation current (Ice,sat) is decreased dramatically because of hot holes injection and interface states generation at the poly-gate edge. Finally, a novel structure with an additional P-type region beneath the poly-gate edge has been proposed to suppress the device degradation under repetitive ESD stresses.