一种新的超薄氧化物击穿定量氢基模型

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934967

J. Suñé, E. Wu

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引用次数: 35

摘要

提出了一种新的超薄SiO/sub - 2/ gate氧化物降解和击穿的定量氢基模型。该模型基于化学反应的量子力学描述，这些化学反应涉及Si-SiO/sub - 2/界面(亚氧化物键)和氧化物体中的质子和氧空位。与实验结果的比较表明，模型参数值与最近的第一性原理计算相符。

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A new quantitative hydrogen-based model for ultra-thin oxide breakdown

A new quantitative hydrogen-based model for the degradation and breakdown of ultra-thin SiO/sub 2/ gate oxides is presented. The model is based on the quantum mechanical description of chemical reactions which involve protons and oxygen vacancies both at the Si-SiO/sub 2/ interface (suboxide bonds) and in the oxide bulk. Comparison with experiments shows that the values of the model parameters are compatible with recent first-principles calculations.

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2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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