一个高速IDDQ传感器的实现

Proceedings of the Ninth Asian Test Symposium Pub Date : 2000-12-04 DOI:10.1109/ATS.2000.893649

Y. Antonioli, T. Inufushi, S. Nishikawa, K. Kinoshita

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引用次数: 4

摘要

本文提出了一种有效的IDDQ传感器设计，采用0.35 /spl mu/m工艺实现。一个直接的反馈方案使过程变化的影响最小化。独立的结构允许人们监测IDDQ传感器的基本特性，即分辨率和速度，并单独进行20k栅极软盘控制器IDDQ测试。仿真和测试结果表明，在1 mA IDDQ测量范围内，在50 MHz时精度优于/spl plusmn/10 /spl mu/A。

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A high-speed IDDQ sensor implementation

This paper presents an effective IDDQ sensor design implemented using a 0.35 /spl mu/m process. A straightforward feedback scheme minimizes the effect of process variations. Independent structures permit one to monitor the basic characteristics of the IDDQ sensor, i.e., resolution and speed, and to carry out a 20k-gate floppy-disk controller IDDQ test separately. Simulation and test results show accuracy better than /spl plusmn/10 /spl mu/A at 50 MHz in a 1 mA IDDQ measurement range.

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Proceedings of the Ninth Asian Test Symposium

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