C. H. Liu, Y. M. Lin, D. Yin, G. Tseng, H. Liaw, H. Wei, S. H. Chen, C. Chao, H. Hwang, S. Pittikoun, S. Aritome
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引用次数: 0
摘要
本文介绍了多氮化ONO改进NAND闪存的各种方法。与传统ONO相比，获得了优异的电池性能和可靠性:(1)由于23 A EOT(等效氧化物厚度)降低，程序电压降低1.9 V;(2)通过浮栅(FG)/顶部氧化物氮化抑制ONO鸟嘴侵蚀栅极再氧化，可实现10 K循环后电池Vt分布宽度缩短20%以上，Vth移位缩短30%以上。MN-ONO是一种很有前途的40纳米以上高密度NAND闪存技术。
Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory
The various methods of multi-nitridation ONO to improve NAND flash memory have been demonstrated in this paper. Excellent cell performance and reliability are obtained compared to convention ONO: (1) 1.9 V program voltage reduction owing to 23 A EOT (equivalant oxide thickness) reduction (2) More than 20% tighter cell Vt distribution width and 30% narrower Vth shift after 10 K cycling can be achieved by supressing ONO bird's beak encroachment of gate re-oxidation by floating gate (FG)/top oxide nitridation. MN-ONO is a promising technology for high density NAND flash beyond 40 nm generation.
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