体接入PD SOI mosfet多端口测量的宽带特性

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563535

D. Lederer, O. Rozeau, J. Raskin

{"title":"体接入PD SOI mosfet多端口测量的宽带特性","authors":"D. Lederer, O. Rozeau, J. Raskin","doi":"10.1109/SOI.2005.1563535","DOIUrl":null,"url":null,"abstract":"In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements\",\"authors\":\"D. Lederer, O. Rozeau, J. Raskin\",\"doi\":\"10.1109/SOI.2005.1563535\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563535\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563535","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在这项工作中，我们提出了一种基于3端口射频测量的原始方法，以准确提取体接入PD SOI mosfet中的体电阻(R/sub /)。该方法可用于评价BSIMSOI等紧凑模型的有效性。射频体接入也能够精确表征内在和外在体电容。然后推导出一个完整的3端口模型，并通过将主体连接到栅极终端在DT MOSFET测量上进一步验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Wideband characterization of body-accessed PD SOI MOSFETs with multiport measurements

In this work we present an original method based on 3-port RF measurements to accurately extract the body resistance (R/sub be/) in body-accessed PD SOI MOSFETs. This method can be used to assess the validity of compact models such as BSIMSOI. The RF body access also enabled a precise characterization of intrinsic and extrinsic body capacitances. A complete 3-port model was then derived and further validated on DT MOSFET measurements by connecting the body to the gate terminal.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International SOI Conference Proceedings

自引率

0.00%

发文量