{"title":"用于X和Ku波段的砷化镓开关几何振荡器","authors":"B. Scott","doi":"10.1109/ISSCC.1982.1156336","DOIUrl":null,"url":null,"abstract":"A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaAs switched geometry oscillator for X and Ku bands\",\"authors\":\"B. Scott\",\"doi\":\"10.1109/ISSCC.1982.1156336\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.\",\"PeriodicalId\":291836,\"journal\":{\"name\":\"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1982.1156336\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1982.1156336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs switched geometry oscillator for X and Ku bands
A single oscillator circuit using an FET pair with RF coupled, dc isolated gates, which is capable of operating at two widely separated but selectable frequencies, will be presented. Unswitched, the oscillations are at 200GHz, and when the second FET is pinched off, the output frequency changes to 12.5GHz.
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