CMOS光电二极管模型及HDL实现

B. Blanco-Filgueira, P. López, Manuel Suárez-Cambre, J. Roldán
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引用次数: 1

摘要

随着CMOS图像传感器由于分辨率和小型化需求而缩小,这些设备的紧凑型模型变得必不可少。基于物理的模型可用于优化器件性能,并允许电路设计人员在集成电路中使用这些传感器。除其他能力外,该分析模型可用于高精度预测最佳光电二极管几何形状,以实现最大的光响应,同时优化总布局面积成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS photodiode model and HDL implementation
With CMOS image sensors scaling down due to the resolution and miniaturization demands, compact models for these devices become essential. A physically based model can be used to optimize the device performance and allow circuit designers to use these sensors in integrated circuits. Among other capacities, this analytical model can be used to predict with high accuracy the best photodiode geometry to achieve the maximum photoresponse while optimizing the total layout area cost.
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