曲径型lpe - p和GaInAsP层生长的新方法

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492308

D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut

{"title":"曲径型lpe - p和GaInAsP层生长的新方法","authors":"D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut","doi":"10.1109/ICIPRM.1996.492308","DOIUrl":null,"url":null,"abstract":"The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Meander type LPE-new approach to growth InP and GaInAsP layers\",\"authors\":\"D. Nohavica, P. Gladkov, M. Lourenço, Z. Yang, K. Homewood, D. Ehrentraut\",\"doi\":\"10.1109/ICIPRM.1996.492308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"11 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用曲径型液相外延技术在GaInAsP/InP材料体系中制备季系固溶体。比较了曲流型LPE与常规LPE制备的层的表面形貌。在(100)取向的InP衬底上生长出成分接近Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/的四元应变层，其垂直晶格失配在压缩条件下高达1.6%。为了修复生长界面，对外延技术进行了改进。用InP生长法检验改性效果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Meander type LPE-new approach to growth InP and GaInAsP layers

The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 8th International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量