{"title":"4H-SiC高性能功率bjt","authors":"Chih-Fang Huang, J. Cooper","doi":"10.1109/LECHPD.2002.1146731","DOIUrl":null,"url":null,"abstract":"In this paper, we summarize recent progress in 4H-SiC BJTs at Purdue University. For 50 /spl mu/m collector devices, BV/sub CEO/>3,200 V is achieved. Large devices (active area=1.05 mm/sup 2/) exhibit common emitter current gain /spl beta/ of around 15, and. specific on-resistance R/sub ON,SP/ of 78 m/spl Omega//cm/sup 2/. Smaller devices (active area=0.0072 mm/sup 2/) have /spl beta/ of 20 and R/sub ON,SP/ of 28 m/spl Omega//cm/sup 2/. For 20 /spl mu/m collector devices, /spl beta/s greater than 50 and R/sub ON,SP/ around 26 m/spl Omega//cm/sup 2/ are observed. The blocking voltage is low (500-700 V) for these devices because of aluminum spiking during the base contact anneal. The observed positive temperature coefficient of R/sub ON,SP/ and negative coefficient of /spl beta/ show that 4H-SiC BJTs can be safely operated in parallel connection. We also observe that /spl beta/ decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination at defect sites in the p+ implanted base contact.","PeriodicalId":137839,"journal":{"name":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-performance power BJTs in 4H-SiC\",\"authors\":\"Chih-Fang Huang, J. Cooper\",\"doi\":\"10.1109/LECHPD.2002.1146731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we summarize recent progress in 4H-SiC BJTs at Purdue University. For 50 /spl mu/m collector devices, BV/sub CEO/>3,200 V is achieved. Large devices (active area=1.05 mm/sup 2/) exhibit common emitter current gain /spl beta/ of around 15, and. specific on-resistance R/sub ON,SP/ of 78 m/spl Omega//cm/sup 2/. Smaller devices (active area=0.0072 mm/sup 2/) have /spl beta/ of 20 and R/sub ON,SP/ of 28 m/spl Omega//cm/sup 2/. For 20 /spl mu/m collector devices, /spl beta/s greater than 50 and R/sub ON,SP/ around 26 m/spl Omega//cm/sup 2/ are observed. The blocking voltage is low (500-700 V) for these devices because of aluminum spiking during the base contact anneal. The observed positive temperature coefficient of R/sub ON,SP/ and negative coefficient of /spl beta/ show that 4H-SiC BJTs can be safely operated in parallel connection. We also observe that /spl beta/ decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination at defect sites in the p+ implanted base contact.\",\"PeriodicalId\":137839,\"journal\":{\"name\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. IEEE Lester Eastman Conference on High Performance Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LECHPD.2002.1146731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. IEEE Lester Eastman Conference on High Performance Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LECHPD.2002.1146731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we summarize recent progress in 4H-SiC BJTs at Purdue University. For 50 /spl mu/m collector devices, BV/sub CEO/>3,200 V is achieved. Large devices (active area=1.05 mm/sup 2/) exhibit common emitter current gain /spl beta/ of around 15, and. specific on-resistance R/sub ON,SP/ of 78 m/spl Omega//cm/sup 2/. Smaller devices (active area=0.0072 mm/sup 2/) have /spl beta/ of 20 and R/sub ON,SP/ of 28 m/spl Omega//cm/sup 2/. For 20 /spl mu/m collector devices, /spl beta/s greater than 50 and R/sub ON,SP/ around 26 m/spl Omega//cm/sup 2/ are observed. The blocking voltage is low (500-700 V) for these devices because of aluminum spiking during the base contact anneal. The observed positive temperature coefficient of R/sub ON,SP/ and negative coefficient of /spl beta/ show that 4H-SiC BJTs can be safely operated in parallel connection. We also observe that /spl beta/ decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination at defect sites in the p+ implanted base contact.