4H-SiC高性能功率bjt

Chih-Fang Huang, J. Cooper
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引用次数: 2

摘要

本文综述了普渡大学在4H-SiC BJTs方面的最新进展。对于50 /spl mu/m集电极器件,可实现BV/sub CEO/> 3200 V。大型器件(有源面积=1.05 mm/sup 2/)的共发射极电流增益/spl beta/约为15。比导通电阻R/sub / ON,SP/ 78 m/spl ω //cm/sup 2/。较小的设备(活动面积=0.0072 mm/sup 2/)有/spl beta/ 20和R/sub ON,SP/ 28 m/spl Omega//cm/sup 2/。对于20 /spl mu/m的收集器器件,/spl beta/s大于50和R/sub / ON,SP/约26 m/spl Omega//cm/sup 2/。这些器件的阻断电压很低(500-700 V),因为在基极接触退火过程中铝会产生尖峰。正温度系数R/sub - ON、正温度系数SP/和负温度系数/spl β /表明4H-SiC bjt可以安全并联工作。我们还观察到/spl β /随着基触点植入物和发射极手指之间的间距减小而减小。我们将此归因于p+植入碱基接触缺陷部位的重组。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-performance power BJTs in 4H-SiC
In this paper, we summarize recent progress in 4H-SiC BJTs at Purdue University. For 50 /spl mu/m collector devices, BV/sub CEO/>3,200 V is achieved. Large devices (active area=1.05 mm/sup 2/) exhibit common emitter current gain /spl beta/ of around 15, and. specific on-resistance R/sub ON,SP/ of 78 m/spl Omega//cm/sup 2/. Smaller devices (active area=0.0072 mm/sup 2/) have /spl beta/ of 20 and R/sub ON,SP/ of 28 m/spl Omega//cm/sup 2/. For 20 /spl mu/m collector devices, /spl beta/s greater than 50 and R/sub ON,SP/ around 26 m/spl Omega//cm/sup 2/ are observed. The blocking voltage is low (500-700 V) for these devices because of aluminum spiking during the base contact anneal. The observed positive temperature coefficient of R/sub ON,SP/ and negative coefficient of /spl beta/ show that 4H-SiC BJTs can be safely operated in parallel connection. We also observe that /spl beta/ decreases as the spacing between base contact implant and emitter finger is reduced. We attribute this to recombination at defect sites in the p+ implanted base contact.
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