新兴CMOS技术的预测延迟评估:一个仿真框架

M. Sellier, J. Portal, B. Borot, S. Colquhoun, R. Ferrant, F. Boeuf, A. Farcy
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引用次数: 6

摘要

本文的主要目标是利用电路预测模拟研究未来技术节点(32纳米及以上)的延迟演变。为此,直接基于ITRS数据,分别针对器件和互连建立了两个SPICE预测模型。提出了预测香料模型的生成,并与45纳米硅数据进行了验证。通过对缓冲互连线的仿真,对预测时延进行了评估。仿真结果表明,2020代的临界互连长度应在10 μ m左右。此外,在未来的技术中,驱动器大小调整和系统缓冲区插入将不再足以系统地限制线延迟的增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predictive Delay Evaluation on Emerging CMOS Technologies: A Simulation Framework
The main goal of this paper is to study the delay evolution for future technology nodes (32 nm and beyond) using electrical circuit predictive simulations. With this aim, two SPICE predictive models, directly based on ITRS data, are developed for devices and for interconnect respectively. The predictive spice models generation is presented and validated versus 45 nm silicon data. The predictive delay evaluation is performed with buffered interconnect lines simulations. The simulation results show that the critical interconnect length should be in the order of 10 mum for the 2020 generation. Moreover, in forthcoming technologies, driver resizing and systematic buffer insertion will no longer be sufficient to systematically limit wire delay increase.
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