一种新型InGap/AlGaAs/GaAs复合发射极异质结双极晶体管

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237272

M. Tsai, Y. Wu, S. Tan, M. Chu, W.T. Chen, Y. Yang, W. Lour

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摘要

本文报道了一种新型复合发射极异质结双极晶体管(CEHBT)，其复合发射极由0.04 /spl μ m In/sub 0.5/Ga/sub 0.5/P本体层和0.06 /spl μ l Al/sub 0.45/Ga/sub 0.55/As/GaAs数字渐变超晶格(DGSL)层构成。CEHBT的集电极-发射极偏置电压为55 mV，基极-发射极导通电压为0.87 V，比InGaP/AlGaAs突发发射极HBT的1.27 V低0.4 V。研究发现，仅使用DGSL层作为钝化层时，CEHBTs的电流增益高达250，甚至可以提高到385。

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A new InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors

This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 /spl mu/m In/sub 0.5/Ga/sub 0.5/P bulk layer and a 0.06 /spl mu/m Al/sub 0.45/Ga/sub 0.55/As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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