溅射偏压对Nb-Si-N薄膜性能的影响

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414234

Jianfeng Wang, Z. Song, K. Xu

{"title":"溅射偏压对Nb-Si-N薄膜性能的影响","authors":"Jianfeng Wang, Z. Song, K. Xu","doi":"10.1109/IVESC.2004.1414234","DOIUrl":null,"url":null,"abstract":"Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different bias voltages. The effect of sputtering bias on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, four-point probe method and microhardness tester were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the bias voltage increases the Nb/Si ratio and the surface roughness increase. The microstructure of Nb-Si-N films is the nano-composite structure with nano-sized NbN crystallites embedded in amorphous SiN/sub x/ phase. High sputtering bias is in favor of the growth of NbN grains in the Nb-Si-N film. As the bias increases the /spl epsiv/-NbN phase increases. The sheet resistance and microhardness of Nb-Si-N film also change as the bias varies. These phenomenons may be related with the /spl epsiv/-NbN phase in some degree.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of sputtering bias on the properties of Nb-Si-N film\",\"authors\":\"Jianfeng Wang, Z. Song, K. Xu\",\"doi\":\"10.1109/IVESC.2004.1414234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different bias voltages. The effect of sputtering bias on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, four-point probe method and microhardness tester were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the bias voltage increases the Nb/Si ratio and the surface roughness increase. The microstructure of Nb-Si-N films is the nano-composite structure with nano-sized NbN crystallites embedded in amorphous SiN/sub x/ phase. High sputtering bias is in favor of the growth of NbN grains in the Nb-Si-N film. As the bias increases the /spl epsiv/-NbN phase increases. The sheet resistance and microhardness of Nb-Si-N film also change as the bias varies. These phenomenons may be related with the /spl epsiv/-NbN phase in some degree.\",\"PeriodicalId\":340787,\"journal\":{\"name\":\"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVESC.2004.1414234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用射频反应磁控溅射技术，在不同的偏置电压下溅射Nb-Si-N薄膜。研究了溅射偏压对Nb-Si-N薄膜性能的影响。采用能量色散x射线能谱、原子力显微镜、x射线衍射、透射电子显微镜、x射线光电子能谱、四点探针法和显微硬度计对Nb-Si-N薄膜的微观结构和性能进行了表征。结果表明，随着偏置电压的增大，Nb/Si比增大，表面粗糙度增大。Nb-Si-N薄膜的微观结构是纳米尺寸的NbN晶体嵌套在非晶SiN/sub x/相中的纳米复合结构。高溅射偏压有利于Nb-Si-N薄膜中NbN晶粒的生长。随着偏压的增加，/spl epsiv/-NbN相增加。Nb-Si-N薄膜的片阻和显微硬度也随偏压的变化而变化。这些现象可能与/spl - epsiv/-NbN相有一定关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The effect of sputtering bias on the properties of Nb-Si-N film

Nb-Si-N films were sputtered by RF reactive magnetron sputtering with different bias voltages. The effect of sputtering bias on the properties of Nb-Si-N film was studied. Energy dispersive X-ray spectroscopy, atomic force microscope, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, four-point probe method and microhardness tester were employed to characterize the microstructure and properties of the Nb-Si-N films. The results reveal that as the bias voltage increases the Nb/Si ratio and the surface roughness increase. The microstructure of Nb-Si-N films is the nano-composite structure with nano-sized NbN crystallites embedded in amorphous SiN/sub x/ phase. High sputtering bias is in favor of the growth of NbN grains in the Nb-Si-N film. As the bias increases the /spl epsiv/-NbN phase increases. The sheet resistance and microhardness of Nb-Si-N film also change as the bias varies. These phenomenons may be related with the /spl epsiv/-NbN phase in some degree.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

自引率

0.00%

发文量