{"title":"窄带MIS结构建模中的高斯正交规则","authors":"A. E. Nastovjak, V. G. Polovinkin","doi":"10.1109/EDM.2009.5173995","DOIUrl":null,"url":null,"abstract":"In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gauss-Quadrature rule in narrow band MIS structures modeling\",\"authors\":\"A. E. Nastovjak, V. G. Polovinkin\",\"doi\":\"10.1109/EDM.2009.5173995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.\",\"PeriodicalId\":262499,\"journal\":{\"name\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2009.5173995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gauss-Quadrature rule in narrow band MIS structures modeling
In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.