{"title":"减小耦合电容,采用电容-晶体管耦合电路","authors":"Majid Eslami Farsani, Noushin Ghaderi","doi":"10.1109/ELECO.2015.7394649","DOIUrl":null,"url":null,"abstract":"In this paper, a new coupling circuit is presented. This circuit uses a new method of subthreshold region biasing to decrease the value of coupling capacitor. In proposed circuit the Coupling capacitor is decreased about 98% in comparison with the ordinary capacitive coupling circuit. In addition, the proposed coupling circuit achieves higher linearity. The performance evaluation of proposed circuit is carried out using HSPICE simulations, 180nm technology and 1.8V power supply.","PeriodicalId":369687,"journal":{"name":"2015 9th International Conference on Electrical and Electronics Engineering (ELECO)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Reduction of coupling capacitance, using a capacitor-transistor coupling circuit\",\"authors\":\"Majid Eslami Farsani, Noushin Ghaderi\",\"doi\":\"10.1109/ELECO.2015.7394649\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new coupling circuit is presented. This circuit uses a new method of subthreshold region biasing to decrease the value of coupling capacitor. In proposed circuit the Coupling capacitor is decreased about 98% in comparison with the ordinary capacitive coupling circuit. In addition, the proposed coupling circuit achieves higher linearity. The performance evaluation of proposed circuit is carried out using HSPICE simulations, 180nm technology and 1.8V power supply.\",\"PeriodicalId\":369687,\"journal\":{\"name\":\"2015 9th International Conference on Electrical and Electronics Engineering (ELECO)\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 9th International Conference on Electrical and Electronics Engineering (ELECO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELECO.2015.7394649\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 9th International Conference on Electrical and Electronics Engineering (ELECO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELECO.2015.7394649","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reduction of coupling capacitance, using a capacitor-transistor coupling circuit
In this paper, a new coupling circuit is presented. This circuit uses a new method of subthreshold region biasing to decrease the value of coupling capacitor. In proposed circuit the Coupling capacitor is decreased about 98% in comparison with the ordinary capacitive coupling circuit. In addition, the proposed coupling circuit achieves higher linearity. The performance evaluation of proposed circuit is carried out using HSPICE simulations, 180nm technology and 1.8V power supply.