在0.18/spl mu/m CMOS平台上开发了12V互补RF LDMOS技术

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239744

A. Moscatelli, C. Contiero, P. Galbiati, C. Raffaglio

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引用次数: 16

摘要

互补RF LDMOS器件首次成功集成在0.18 /spl mu/m CMOS平台上。获得了用于n通道和p通道器件的12v电压能力和18ghz和12ghz的截止频率。本文介绍了互补的射频LDMOS结构和器件性能。

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A 12V complementary RF LDMOS technology developed on a 0.18/spl mu/m CMOS platform

Complementary RF LDMOS devices have been successfully integrated for the first time in a 0.18 /spl mu/m CMOS platform. A 12 V voltage capability and cut off frequency of 18 GHz and 12 GHz, respectively, for N-channel and P-channel devices have been obtained. In this paper, the complementary RF LDMOS architecture is presented together with device performances.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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