Simulation of self-heating and contact resistance influences on nMOSFETs

The lattice heat equation and the Schottky contact model were implemented in a device simulator to evaluate the influences of self-heating on inversion layer mobility /spl mu//sub inv/ and contact resistance R/sub co/ in scaled-down nMOSFETs. It is shown that the self-heating degrades /spl mu//sub inv/ and reduces R/sub co/ of source/drain silicide. As ambient temperature T/sub amb/ increases, the degradation of /spl mu//sub inv/ becomes more pronounced, because of the different contribution of the temperature dependence of the phonon scattering in the /spl mu//sub inv/ model. Conversely, the reduction of R/sub co/ by self-heating becomes more pronounced as T/sub amb/ decreases.