S. Eminente, K. Na, S. Cristoloveanu, L. Mathew, A. Vandooren
{"title":"migfet的横向和纵向耦合效应","authors":"S. Eminente, K. Na, S. Cristoloveanu, L. Mathew, A. Vandooren","doi":"10.1109/SOI.2005.1563548","DOIUrl":null,"url":null,"abstract":"We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the two lateral channels and the coupling between one lateral channel and the back gate. The lateral coupling effect between the two gates is strong and can be used to tune the threshold voltage of the device whereas the vertical coupling is weaker and depends on the MIGFET size.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"1974 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Lateral and vertical coupling effects in MIGFETs\",\"authors\":\"S. Eminente, K. Na, S. Cristoloveanu, L. Mathew, A. Vandooren\",\"doi\":\"10.1109/SOI.2005.1563548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the two lateral channels and the coupling between one lateral channel and the back gate. The lateral coupling effect between the two gates is strong and can be used to tune the threshold voltage of the device whereas the vertical coupling is weaker and depends on the MIGFET size.\",\"PeriodicalId\":116606,\"journal\":{\"name\":\"2005 IEEE International SOI Conference Proceedings\",\"volume\":\"1974 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2005.1563548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the two lateral channels and the coupling between one lateral channel and the back gate. The lateral coupling effect between the two gates is strong and can be used to tune the threshold voltage of the device whereas the vertical coupling is weaker and depends on the MIGFET size.
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