CCl2F2/O2等离子体中硅的等离子体化学腐蚀模型

2012 7th International Forum on Strategic Technology (IFOST) Pub Date : 2012-11-26 DOI:10.1109/IFOST.2012.6357579

B. Bogomolov

{"title":"CCl2F2/O2等离子体中硅的等离子体化学腐蚀模型","authors":"B. Bogomolov","doi":"10.1109/IFOST.2012.6357579","DOIUrl":null,"url":null,"abstract":"The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.","PeriodicalId":319762,"journal":{"name":"2012 7th International Forum on Strategic Technology (IFOST)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Model of plasma chemical etching of Si in CCl2F2/O2 plasma\",\"authors\":\"B. Bogomolov\",\"doi\":\"10.1109/IFOST.2012.6357579\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.\",\"PeriodicalId\":319762,\"journal\":{\"name\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th International Forum on Strategic Technology (IFOST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IFOST.2012.6357579\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th International Forum on Strategic Technology (IFOST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IFOST.2012.6357579","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

讨论了聚四氟乙烯聚合物在石英反应器中CCl2F2/O2等离子体刻蚀硅的基本结果。以聚四氟乙烯聚合物蚀刻为代价，建立了硅在CCl2F2/O2等离子体中活性传递化学活性粒子(CAP)条件下的等离子体化学蚀刻(PCE)不一致模型。

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Model of plasma chemical etching of Si in CCl2F2/O2 plasma

The basic results of plasma etching of silicon in CCl₂F₂/O₂ in quartz reactor with teflon polymer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl₂F₂/O₂ in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.

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2012 7th International Forum on Strategic Technology (IFOST)

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